BC639 transistor (npn) features power dissipation p cm: 1 w (tamb=25 ) collector current i cm: 1 a collector-base voltage v (br)cbo : 100 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= 100 a, i e =0 100 v collector-emitter breakdown voltage v (br)ceo ic= 1 ma, i b =0 80 v emitter-base breakdown voltage v (br)ebo i e = 100 a, i c =0 5 v collector cut-off current i cbo v cb = 30 v, i e =0 0.1 a emitter cut-off current i ebo v eb = 5 v, i c =0 0.1 a h fe(1) v ce = 2 v, i c = 5 ma 25 h fe(2) v ce = 2 v, i c = 150 ma 40 160 dc current gain h fe(3) v ce = 2 v, i c = 500 ma 25 collector-emitter saturation voltage v ce(sat) i c = 500 ma, i b = 50 ma 0.5 v base-emitter voltage v be v ce = 2 v, i c = 500 ma 1 v transition frequency f t v ce = 5 v, i c = 50ma , 100 mhz 1 2 3 to-92 1. emitter 2. collector 3. base b c639 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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